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B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet
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751.

B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252
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752.

600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263
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753.

150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 150N08/I150N08/E150N08 F150N08 Maximum Drian-Source DC Voltage VDS 80 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 30V N-Channel Enhancement Mode Power Mosfet 110n03 to-220
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754.

110A 30V N-Channel Enhancement Mode Power Mosfet 110n03 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS 30 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252
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755.

9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220
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756.

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220
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757.

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f
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758.

10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263
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759.

140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251
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760.

600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85D to-252
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761.

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85D to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251
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762.

4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet
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763.

F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 16N60 F16N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Three-Terminal Voltage Regulator IC L7809CV to-220
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764.

Three-Terminal Voltage Regulator IC L7809CV to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V Schottky Barrier Diode Mbr40100CT to-220
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765.

40A 100V Schottky Barrier Diode Mbr40100CT to-220 Open Details in New Window [Jun 24, 2024]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd